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NTRV4101PT1G Tech Specifications

Trans MOSFET P-CH 20V 3.2A Automotive 3-Pin SOT-23

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 1.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Turn-Off Delay Time 30.2 ns
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.085Ohm
Height 1.01mm
Width 1.4mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 3
Power Dissipation-Max 420mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Rise Time 12.6ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 3.2A
Drain Current-Max (Abs) (ID) 2.4A
Drain to Source Breakdown Voltage -20V
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
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NTRV4101PT1G Documents

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NTRV4101PT O Specialized Hot ICs 18985
NTRV4101PT1G AMI Semiconductor / ON Semiconductor Transistors - FETs, MOSFETs - Single 13096
NTRV4101PT1G MOS AMI Semiconductor / ON Semiconductor Specialized Hot ICs 3269

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