NTTD4401FR2G Tech Specifications

MOSFET P-CH 20V 2.4A 8MICRO

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -3.3A
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 1.42W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3.3A
Drain Current-Max (Abs) (ID) 2.4A
Drain to Source Breakdown Voltage -20V
Feedback Cap-Max (Crss) 175 pF
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series FETKY™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Power Dissipation-Max 780mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 3.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±10V
Turn-Off Delay Time 33 ns
Gate to Source Voltage (Vgs) -10V
Drain-source On Resistance-Max 0.09Ohm
FET Feature Schottky Diode (Isolated)
RoHS Status RoHS Compliant
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NTTD4401FR2G Documents

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