NTTFS4821NTAG Tech Specifications

NTTFS4821NTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 8
Number of Elements 1
Power Dissipation-Max 660mW Ta 38.5W Tc
Power Dissipation 4.1W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.5A Ta 57A Tc
Rise Time 22ns
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 750μm
Width 3.15mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 11.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Fall Time (Typ) 4.5 ns
Continuous Drain Current (ID) 18.6A
Drain Current-Max (Abs) (ID) 57A
Avalanche Energy Rating (Eas) 55 mJ
Length 3.15mm
Radiation Hardening No
Lead Free Lead Free
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NTTFS4821NTAG Documents

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