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NTTFS5811NLTWG Tech Specifications

MOSFET N-CH 40V 53.6A 8DFN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 33W
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 6.4m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 53A
Drain to Source Breakdown Voltage 40V
Nominal Vgs 1.7 V
Length 3.15mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 2.7W Ta 33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Ta 53A Tc
Rise Time 30ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 65 mJ
Height 800μm
Width 3.15mm
REACH SVHC No SVHC
Lead Free Lead Free
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