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NTZD3154NT1G Tech Specifications

NTZD3154NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 400MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Power Dissipation 250mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Rise Time 4ns
Turn-Off Delay Time 16 ns
Threshold Voltage 1V
Drain Current-Max (Abs) (ID) 0.54A
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 600μm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Terminal Form FLAT
Current Rating 540mA
Base Part Number NTZD3154N
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 540mA
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
FET Feature Standard
Length 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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