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NUS5530MNR2G Tech Specifications

NUS5530MNR2G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Specialized Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Voltage - Rated 35V PNP 20V P-Channel
Current Rating (Amps) 2A PNP 3.9A P-Channel
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Rise Time-Max 55ns
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Transistor Type NPN, P-Channel
Max Collector Current 2A
Gate to Source Voltage (Vgs) -35V
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
Collector Base Voltage (VCBO) -55V
DC Current Gain-Min (hFE) 100
VCEsat-Max 0.3 V
Height 950μm
Width 3.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Package / Case 8-VDFN Exposed Pad
Number of Pins 8
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Applications General Purpose
Subcategory Other Transistors
Max Power Dissipation 2.5W
Current Rating 3.9A
Base Part Number NUS5530MN
Number of Elements 1
Element Configuration Dual
Power Dissipation 635mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 35V
Continuous Drain Current (ID) -3.9A
Max Frequency 100MHz
Collector Emitter Saturation Voltage -100mV
FET Technology METAL-OXIDE SEMICONDUCTOR
Emitter Base Voltage (VEBO) -5V
Drain to Source Resistance 200Ohm
Fall Time-Max (tf) 70ns
Length 3.3mm
Radiation Hardening No
Lead Free Lead Free
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NUS5530MNR2G Documents

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