NV25640DWHFT3G Tech Specifications

ON SEMICONDUCTOR - NV25640DWHFT3G - EEPROM, 64KBIT, -40 TO 150DEG C

Product Attribute Attribute Value
Category Integrated Circuits (ICs) / Memory
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Number of Terminations 8
Technology CMOS
Terminal Position DUAL
Number of Functions 1
Terminal Pitch 1.27mm
JESD-30 Code R-PDSO-G8
Supply Voltage-Min (Vsup) 2.5V
Memory Type Non-Volatile
Clock Frequency 10MHz
Memory Format EEPROM
Organization 8KX8
Write Cycle Time - Word, Page 4ms
Parallel/Serial SERIAL
Write Cycle Time-Max (tWC) 4ms
Length 4.9mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -40°C~150°C TA
Series Automotive, AEC-Q100
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Supply 2.5V~5.5V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Supply Voltage 5V
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Supply Voltage-Max (Vsup) 5.5V
Memory Size 64K 8K x 8
Operating Mode SYNCHRONOUS
Access Time 40ns
Memory Interface SPI
Memory Width 8
Memory Density 65536 bit
Serial Bus Type SPI
Height Seated (Max) 1.75mm
Width 3.9mm
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