NVATS5A113PLZT4G Tech Specifications

MOSFET P-CHANNEL 60V 38A ATPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
JESD-609 Code e6
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 60W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.6V @ 1mA
Current - Continuous Drain (Id) @ 25°C 38A Ta
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0295Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 29.5m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain Current-Max (Abs) (ID) 38A
Pulsed Drain Current-Max (IDM) 114A
Avalanche Energy Rating (Eas) 95 mJ
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