NVD4810NT4G Tech Specifications

Trans MOSFET N-CH 30V 12.4A Automotive 3-Pin(2+Tab) DPAK T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.4W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Continuous Drain Current (ID) 54A
Drain Current-Max (Abs) (ID) 9A
Avalanche Energy Rating (Eas) 98 mJ
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Ta 54A Tc
Rise Time 20.7ns
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
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