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NVD5490NLT4G Tech Specifications

Trans MOSFET N-CH 60V 5A Automotive 3-Pin(2+Tab) DPAK T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 3.4W
Turn On Delay Time 9.4 ns
Rds On (Max) @ Id, Vgs 64m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 17A
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 60V
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Power Dissipation-Max 3.4W Ta 49W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5A Ta 17A Tc
Rise Time 57ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.085Ohm
Height 2.38mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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