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NVD5805NT4G Tech Specifications

Trans MOSFET N-CH 40V 51A Automotive 3-Pin(2+Tab) DPAK T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 34 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 47W
Turn On Delay Time 10.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 51A Tc
Rise Time 17.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 22.9 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 80 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 47W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1725pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 4.5 ns
Continuous Drain Current (ID) 51A
Drain-source On Resistance-Max 0.0095Ohm
Pulsed Drain Current-Max (IDM) 85A
Radiation Hardening No
Lead Free Lead Free
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