NVD6416ANT4G Tech Specifications

MOSFET N-CH 100V 17A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Tc
Rise Time 22ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Power Dissipation 71W
Turn On Delay Time 9.2 ns
Rds On (Max) @ Id, Vgs 81m Ω @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 17A
Drain-source On Resistance-Max 0.081Ohm
Pulsed Drain Current-Max (IDM) 62A
RoHS Status ROHS3 Compliant
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