NVD6824NLT4G Tech Specifications

NVD6824NLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 3.9W
Turn On Delay Time 15 ns
Rds On (Max) @ Id, Vgs 20m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3468pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 42 ns
Continuous Drain Current (ID) 8.5A
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 175°C
Length 6.73mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Power Dissipation-Max 3.9W Ta 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.5A Ta 41A Tc
Rise Time 55ns
Vgs (Max) ±20V
Turn-Off Delay Time 31 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 80 mJ
Height 2.51mm
Width 6.22mm
Lead Free Lead Free
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NVD6824NLT4G Documents

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