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NVMFD5877NLWFT3G Tech Specifications

Trans MOSFET N-CH 60V 17A 8-Pin DFN T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 3.2W
Pin Count 8
JESD-30 Code R-PDSO-F6
Element Configuration Dual
Power Dissipation 3.2W
Turn On Delay Time 4.9 ns
Rds On (Max) @ Id, Vgs 39m Ω @ 7.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 6A
Rise Time 6.4ns
Turn-Off Delay Time 14.5 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 74A
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form FLAT
Reference Standard AEC-Q101
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Fall Time (Typ) 2.4 ns
Continuous Drain Current (ID) 17A
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 40 mJ
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
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