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NVMFS6H800NT1G Tech Specifications

NVMFS6H800NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Operating Temperature -55°C~175°C TJ
Published 2015
JESD-609 Code e3
Part Status Active
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Channels 1
Power Dissipation 3.8W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 330μA
Current - Continuous Drain (Id) @ 25°C 28A Ta 203A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 97 ns
Gate to Source Voltage (Vgs) 20V
Max Junction Temperature (Tj) 175°C
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case 8-PowerTDFN, 5 Leads
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 3.8W Ta 200W Tc
Turn On Delay Time 25 ns
Rds On (Max) @ Id, Vgs 2.1m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 28A
Drain to Source Breakdown Voltage 80V
Height 1.1mm
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NVMFS6H800NT1G Documents

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