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P2N2222ARL1G Tech Specifications

P2N2222ARL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Packaging Tape & Reel (TR)
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC 40V
Current Rating 600mA
Base Part Number P2N2222
Polarity NPN
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 75V
hFE Min 35
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 625mW
Frequency 300MHz
Number of Elements 1
Element Configuration Single
Power - Max 625mW
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
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P2N2222ARL1G Documents

Download datasheets and manufacturer documentation for P2N2222ARL1G

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