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P2N2907AZL1G Tech Specifications

P2N2907AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC -60V
Terminal Position BOTTOM
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 1.6V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector (Ic) (Max) 600mA
Collector Emitter Saturation Voltage -1.6V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 110ns
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Current Rating -600mA
Base Part Number P2N2907
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 200MHz
Transistor Type PNP
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) -60V
hFE Min 75
Turn On Time-Max (ton) 50ns
Lead Free Lead Free
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P2N2907AZL1G Documents

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