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PZT2222AT1G Tech Specifications

PZT2222AT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form GULL WING
Current Rating 600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 75V
hFE Min 35
Height 1.57mm
Width 3.5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 40V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number PZT2222A
Number of Elements 1
Power Dissipation 1.5W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Turn Off Time-Max (toff) 285ns
Length 6.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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