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SBC846ALT1G Tech Specifications

SBC846ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 100MHz
Number of Elements 1
Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 80V
hFE Min 90
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Pin Count 3
Element Configuration Single
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 65V
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 65V
Emitter Base Voltage (VEBO) 6V
Height 1.01mm
Width 1.4mm
RoHS Status ROHS3 Compliant
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SBC846ALT1G Documents

Download datasheets and manufacturer documentation for SBC846ALT1G

  • Datasheets

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