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SGF23N60UFTU Tech Specifications

SGF23N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-3P-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Current Rating 12A
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection ISOLATED
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Current - Collector Pulsed (Icm) 92A
Switching Energy 115μJ (on), 135μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Weight 6.962g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 75W
Base Part Number SG*23N60
Number of Elements 1
Power Dissipation 75W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 23A
Collector Emitter Saturation Voltage 2.1V
Test Condition 300V, 12A, 23 Ω, 15V
Turn Off Time-Nom (toff) 320 ns
Td (on/off) @ 25°C 17ns/60ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 250ns
RoHS Status ROHS3 Compliant
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SGF23N60UFTU Documents

Download datasheets and manufacturer documentation for SGF23N60UFTU

  • Datasheets

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