SGF5N150UFTU Tech Specifications

SGF5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Through Hole
Package / Case TO-3P-3 Full Pack
Weight 6.962g
Operating Temperature -55°C~150°C TJ
Published 2003
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 62.5W
Number of Elements 1
Power Dissipation 62.5W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 30 ns
Max Collector Current 10A
Voltage - Collector Emitter Breakdown (Max) 1500V
Turn On Time 25 ns
Vce(on) (Max) @ Vge, Ic 5.5V @ 10V, 5A
Gate Charge 30nC
Td (on/off) @ 25°C 10ns/30ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 120ns
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 1.5kV
Current Rating 5A
Element Configuration Single
Case Connection ISOLATED
Turn On Delay Time 10 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.5kV
Collector Emitter Breakdown Voltage 1.5kV
Collector Emitter Saturation Voltage 4.7V
Test Condition 600V, 5A, 10 Ω, 10V
Turn Off Time-Nom (toff) 100 ns
Current - Collector Pulsed (Icm) 20A
Switching Energy 190μJ (on), 100μJ (off)
Gate-Emitter Thr Voltage-Max 4V
Radiation Hardening No
RoHS Status RoHS Compliant
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SGF5N150UFTU Documents

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