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SGP23N60UFTU Tech Specifications

Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Base Part Number SG*23N60
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Turn-Off Delay Time 60 ns
Max Collector Current 23A
Collector Emitter Breakdown Voltage 600V
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Td (on/off) @ 25°C 17ns/60ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 280ns
Length 10.1mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Current Rating 23A
Number of Elements 1
Power Dissipation 100W
Turn On Delay Time 17 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.1V
Test Condition 300V, 12A, 23 Ω, 15V
Continuous Collector Current 23A
Current - Collector Pulsed (Icm) 92A
Switching Energy 115μJ (on), 135μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Height 9.4mm
Width 4.7mm
RoHS Status ROHS3 Compliant
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SGP23N60UFTU Documents

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