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SMMBT2369ALT1G Tech Specifications

SMMBT2369ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Form GULL WING
Reference Standard AEC-Q101
Configuration SINGLE
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 400nA
Collector Emitter Breakdown Voltage 15V
Turn Off Time-Max (toff) 18ns
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Power - Max 225mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Base Voltage (VCBO) 40V
Turn On Time-Max (ton) 12ns
RoHS Status ROHS3 Compliant
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