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SS8050CBU Tech Specifications

SS8050CBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 179mg
Operating Temperature 150°C TJ
Published 2017
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1W
Current Rating 1.5A
Base Part Number SS8050
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Transition Frequency 190MHz
Collector Base Voltage (VCBO) 40V
hFE Min 85
Length 4.58mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Terminal Position BOTTOM
Frequency 100MHz
Number of Elements 1
Power Dissipation 1W
Gain Bandwidth Product 100MHz
Transistor Type NPN
Max Collector Current 1.5A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 6V
Height 4.58mm
Width 3.86mm
REACH SVHC No SVHC
Lead Free Lead Free
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SS8050CBU Documents

Download datasheets and manufacturer documentation for SS8050CBU

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