STDV3055L104T4G Tech Specifications

MOSFET N-CH 60V 12A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 23 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain Current-Max (Abs) (ID) 12A
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 61 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 1.5W Ta 48W Tj
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12A Ta
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±15V
Drain-source On Resistance-Max 0.14Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
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STDV3055L104T4G AMI Semiconductor / ON Semiconductor Transistors - FETs, MOSFETs - Single 5748

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