UHB50SC12E1BC3N Tech Specifications

1200 V, 50 A SiC Half Bridge Module

Product Attribute Attribute Value
Category Discrete Semiconductor Products / SiC Power Module
Manufacturer Qorvo
Factory Lead Time 3 Weeks
VDS Max 1200V
RDS(on) Typ @ 25C 19mohm
Package Type E1B
On Resistance RDS(on) 19 mohm (typ)
Excellent reverse recovery Qrr = 495 nC
Low gate charge QG = 85 nC
ESD protected HBM class 2 and CDM class C3
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
ID Max 50A
Topology Half Bridge
ECCN EAR99
Operating temperature 150 C (max)
Low body diode VFSD 1.2 V
Threshold voltage VG(th) 5 V (typ) allowing 0 to 15 V drive
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