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2SA1797T100Q Tech Specifications

2SA1797T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Not For New Designs
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
Base Part Number 2SA1797
Number of Elements 1
Power Dissipation 2W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 50V
hFE Min 82
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 1997
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN COPPER
Voltage - Rated DC -50V
Terminal Form FLAT
Current Rating -3A
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 200MHz
Transistor Type PNP
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -6V
Radiation Hardening No
Lead Free Lead Free
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2SA1797T100Q Documents

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