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2SB1188T100P Tech Specifications

2SB1188T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Contact Plating Copper, Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Case Connection COLLECTOR
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 2A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 32V
Transition Frequency 100MHz
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.8 V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin/Copper (Sn/Cu)
Voltage - Rated DC -32V
Terminal Form FLAT
Current Rating -2A
Base Part Number 2SB1188
JESD-30 Code R-PSSO-F3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 32V
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 500mA 3V
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Current - Collector (Ic) (Max) 2A
Collector Base Voltage (VCBO) -32V
hFE Min 82
Radiation Hardening No
Lead Free Lead Free
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