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2SB1241TV2R Tech Specifications

2SB1241TV2R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case 3-SIP
Operating Temperature 150°C TJ
Published 2009
Part Status Obsolete
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 1W
Current Rating -1A
Base Part Number 2SB1241
JESD-30 Code R-PSIP-T3
Number of Elements 1
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 1V
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 3V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC -80V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 3A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) -80V
hFE Min 180
Lead Free Lead Free
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2SB1241TV2R Documents

Download datasheets and manufacturer documentation for 2SB1241TV2R

  • Datasheets

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