2SC5662T2LP Tech Specifications

2SC5662T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case SOT-723
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Voltage - Rated DC 11V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 11V
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Transition Frequency 3200MHz
Max Breakdown Voltage 11V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 50mA
Collector-Base Capacitance-Max 1.5pF
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Form FLAT
Current Rating 50mA
Base Part Number 2SC5662
Number of Elements 1
Power Dissipation 150mW
Gain Bandwidth Product 3.2 GHz
Transistor Type NPN
Max Collector Current 50mA
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 11V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 20V
hFE Min 56
Highest Frequency Band S B
Radiation Hardening No
RoHS Status ROHS3 Compliant
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2SC5662T2LP Documents

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