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2SCR522EBTL Tech Specifications

2SCR522EBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case SC-89, SOT-490
Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 150mW
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-F3
Number of Elements 1
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transition Frequency 400MHz
Max Breakdown Voltage 20V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 200mA
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 400MHz
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage 120mV
Collector Base Voltage (VCBO) 20V
hFE Min 120
RoHS Status ROHS3 Compliant
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2SCR522EBTL Documents

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