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2SD1866TV2 Tech Specifications

2SD1866TV2 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature 150°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
HTS Code 8541.29.00.75
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Qualification Status Not Qualified
Polarity NPN
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 70V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Transition Frequency 80MHz
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 1.5 V
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case 3-SIP
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.0857
Subcategory Other Transistors
Max Power Dissipation 1W
Current Rating 2A
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Darlington
Max Collector Current 2A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
hFE Min 1000
RoHS Status ROHS3 Compliant
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2SD1866TV2 Documents

Download datasheets and manufacturer documentation for 2SD1866TV2

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