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2SD2150T100S Tech Specifications

2SD2150T100S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Contact Plating Copper, Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Case Connection COLLECTOR
Gain Bandwidth Product 290MHz
Transistor Type NPN
Max Collector Current 3A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 20V
Max Breakdown Voltage 20V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 3A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish TIN COPPER
Voltage - Rated DC 20V
Terminal Form FLAT
Current Rating 3A
Base Part Number 2SD2150
JESD-30 Code R-PSSO-F3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Transition Frequency 290MHz
Collector Base Voltage (VCBO) 40V
hFE Min 120
VCEsat-Max 0.5 V
RoHS Status ROHS3 Compliant
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2SD2150T100S Documents

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