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2SD2153T100W Tech Specifications

2SD2153T100W datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 500mA 6V
Vce Saturation (Max) @ Ib, Ic 500mV @ 20mA, 1A
Transition Frequency 110MHz
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 0.5 V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Tin
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Terminal Form FLAT
Reach Compliance Code not_compliant
Base Part Number 2SD2153
JESD-30 Code R-PSSO-F3
Number of Elements 1
Case Connection COLLECTOR
Gain Bandwidth Product 110MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Continuous Collector Current 2A
RoHS Status ROHS3 Compliant
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2SD2153T100W Documents

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