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2SD2351T106W Tech Specifications

2SD2351T106W datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 200mW
Terminal Form GULL WING
Current Rating 150mA
Base Part Number 2SD2351
Number of Elements 1
Power Dissipation 200mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 1mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Max Frequency 100MHz
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 60V
hFE Min 820
Height 900μm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 250MHz
Transistor Type NPN
Max Collector Current 150mA
Current - Collector Cutoff (Max) 300nA ICBO
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 150mA
Length 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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2SD2351T106W Documents

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