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BSM180D12P3C007 Tech Specifications

SIC POWER MODULE

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 25 Weeks
Package / Case Module
Operating Temperature 175°C TJ
Part Status Active
Number of Terminations 10
Subcategory FET General Purpose Power
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 5.6V @ 50mA
Current - Continuous Drain (Id) @ 25°C 180A Tc
Drain Current-Max (Abs) (ID) 180A
DS Breakdown Voltage-Min 1200V
FET Feature Silicon Carbide (SiC)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount NO
Packaging Bulk
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 880W
Terminal Form UNSPECIFIED
Reach Compliance Code not_compliant
JESD-30 Code R-XUFM-X10
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Pulsed Drain Current-Max (IDM) 360A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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BSM180D12P3C007 Documents

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