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DTA113TKAT146 Tech Specifications

TRANS PREBIAS PNP 200MW SMT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Number of Pins 3
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Form GULL WING
Current Rating -100mA
Base Part Number DTA113
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
hFE Min 100
Continuous Collector Current -100mA
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Polarity PNP
Power Dissipation 200mW
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -5V
Resistor - Base (R1) 1 k Ω
Radiation Hardening No
Lead Free Lead Free
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DTA113TKAT146 Documents

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