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DTC124EKAT246 Tech Specifications

TRANS PREBIAS NPN 200MW SMT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number DTC124
JESD-30 Code R-PDSO-G3
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Max Collector Current 30mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Emitter Base (R2) 22 k Ω
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 200mW
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power - Max 200mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Resistor - Base (R1) 22 k Ω
VCEsat-Max 0.3 V
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DTC124EKAT246 Documents

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