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DTD143ECT116 Tech Specifications

NPN 500MA/50V DIGITAL TRANSISTOR

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
JESD-609 Code e1
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
HTS Code 8541.21.00.75
Max Power Dissipation 200mW
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G3
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Max Collector Current 500mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 4.7 k Ω
VCEsat-Max 0.3 V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power - Max 200mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status ROHS3 Compliant
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DTD143ECT116 Documents

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