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DTD513ZMGT2L Tech Specifications

DIGITAL TRANSISTOR (500MA/12V),

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case SOT-723
Part Status Active
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector (Ic) (Max) 500mA
Resistor - Base (R1) 1 k Ω
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN - Pre-Biased
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 260MHz
Resistor - Emitter Base (R2) 10 k Ω
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DTD513ZMGT2L Documents

Download datasheets and manufacturer documentation for DTD513ZMGT2L

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DTD513ZMGT2L LAPIS Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased 8752
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