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DTD713ZMT2L Tech Specifications

TRANS PREBIAS NPN 150MW VMT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SOT-723
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish TIN COPPER
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number DTD713
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Pre-Biased
Max Collector Current 200mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 30V
Max Breakdown Voltage 30V
hFE Min 140
Continuous Collector Current 200mA
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
Max Power Dissipation 150mW
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Polarity NPN
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 260MHz
Frequency - Transition 260MHz
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
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DTD713ZMT2L Documents

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