DTDG14GPT100 Tech Specifications

TRANS PREBIAS NPN 2W MPT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish TIN COPPER
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC 60V
Terminal Form FLAT
Current Rating 1A
Base Part Number DTDG14
Max Output Current 1A
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Type NPN - Pre-Biased
Max Collector Current 1A
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 60V
Max Breakdown Voltage 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
VCEsat-Max 0.4 V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-243AA
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Operating Supply Voltage 60V
Polarity NPN
Power Dissipation 500mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 400mV
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 500mA
Transition Frequency 80MHz
Frequency - Transition 80MHz
hFE Min 300
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
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