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HP8K22TB Tech Specifications

30V NCH NCH MID POWER MOSFET

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F6
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
Drain Current-Max (Abs) (ID) 12A
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 11.4 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Part Status Active
Number of Terminations 6
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 25W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 27A 57A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 0.0133Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
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HP8K22TB Documents

Download datasheets and manufacturer documentation for HP8K22TB

  • Datasheets

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HP8K22TB brand manufacturers: ROHM Semiconductor, Bonchip stock, HP8K22TB reference price. HP8K22TB parameters, HP8K22TB Datasheet PDF and pin diagram description download.You can use the HP8K22TB Pluggable Connectors, DSP Datesheet PDF, find HP8K22TB pin diagram and circuit diagram and usage method of function, HP8K22TB electronics tutorials.You can download from the Bonchip.
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