MMSTA64T146 Tech Specifications

MMSTA64T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Part Status Not For New Designs
Number of Terminations 3
HTS Code 8541.21.00.75
Terminal Position DUAL
Operating Temperature (Max) 150°C
Polarity PNP
Power Dissipation 200mW
Gain Bandwidth Product 125MHz
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Base Voltage (VCBO) 30V
hFE Min 10000
Collector-Base Capacitance-Max 7pF
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Published 1998
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Max Collector Current 300mA
Current - Collector Cutoff (Max) 100nA ICBO
Current - Collector (Ic) (Max) 300mA
Collector Emitter Saturation Voltage 1.5V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 500mA
Radiation Hardening No
Lead Free Lead Free
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MMSTA64T146 Documents

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