QH8MA2TCR Tech Specifications

MOSFET N/P-CH 30V 4.5A/3A TSMT8

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 4.5A
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 1.5 mJ
FET Feature Logic Level Gate
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Operating Temperature 150°C TJ
Published 2014
Part Status Active
Number of Terminations 8
Terminal Position DUAL
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 4.5A 3A
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 3A
Drain-source On Resistance-Max 0.0056Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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