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QS8K11TCR Tech Specifications

4V DRIVE NCH+NCH MOSFET

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Part Status Active
Number of Terminations 8
Subcategory FET General Purpose Power
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 1.5W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 3.5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 0.07Ohm
DS Breakdown Voltage-Min 30V
Power Dissipation-Max (Abs) 1.5W
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50m Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 5V
Drain Current-Max (Abs) (ID) 3.5A
Pulsed Drain Current-Max (IDM) 12A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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QS8K11TCR Documents

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