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QS8M31TR Tech Specifications

QS8M31 IS COMPLEX TYPE MOSFET(P+

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 1.1W Ta
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA, 3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 3A Ta 2A Ta
Drain to Source Voltage (Vdss) 60V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 1.4 mJ
FET Feature Standard
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Part Status Active
Number of Terminations 8
Terminal Position DUAL
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 270pF 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC, 7.2nC @ 5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.137Ohm
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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QS8M31TR Documents

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QS8M31TR brand manufacturers: ROHM Semiconductor, Bonchip stock, QS8M31TR reference price. QS8M31TR parameters, QS8M31TR Datasheet PDF and pin diagram description download.You can use the QS8M31TR Pluggable Connectors, DSP Datesheet PDF, find QS8M31TR pin diagram and circuit diagram and usage method of function, QS8M31TR electronics tutorials.You can download from the Bonchip.
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