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RGT30NS65DGTL Tech Specifications

IGBT 650V 30A 133W TO-263S

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 2
Max Power Dissipation 133W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 133W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 64 ns
Max Collector Current 30A
Collector Emitter Breakdown Voltage 650V
Max Breakdown Voltage 650V
Test Condition 400V, 15A, 10 Ω, 15V
Max Junction Temperature (Tj) 175°C
Turn Off Time-Nom (toff) 204 ns
Gate Charge 32nC
Td (on/off) @ 25°C 18ns/64ns
REACH SVHC Unknown
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.946308g
Operating Temperature -40°C~175°C TJ
Published 2014
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 18 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 55 ns
Collector Emitter Saturation Voltage 1.65V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Continuous Collector Current 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 45A
Height 5mm
RoHS Status ROHS3 Compliant
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