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RGT8BM65DTL Tech Specifications

IGBT 650V 8A 62W TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 2
Max Power Dissipation 62W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Power - Max 62W
Polarity/Channel Type N-CHANNEL
Max Collector Current 8A
Collector Emitter Breakdown Voltage 650V
Max Breakdown Voltage 650V
Test Condition 400V, 4A, 50 Ω, 15V
Continuous Collector Current 4A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 12A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature -40°C~175°C TJ
Published 2014
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 40 ns
Collector Emitter Saturation Voltage 1.65V
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Turn Off Time-Nom (toff) 158 ns
Gate Charge 13.5nC
Td (on/off) @ 25°C 17ns/69ns
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