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RGT8NS65DGC9 Tech Specifications

IGBT

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 40ns
Current - Collector (Ic) (Max) 8A
Test Condition 400V, 4A, 50 Ω, 15V
Turn Off Time-Nom (toff) 158 ns
Gate Charge 13.5nC
Td (on/off) @ 25°C 17ns/69ns
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~175°C TJ
Part Status Active
Number of Terminations 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 65W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 650V
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 12A
RoHS Status ROHS3 Compliant
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RGT8NS65DGC9 Documents

Download datasheets and manufacturer documentation for RGT8NS65DGC9

  • Datasheets

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